By I. Ohdomari, M. Oshima, A. Hiraki
Those complaints comprise a variety of papers provided at a symposium on semiconductor interfaces. subject matters lined comprise metal/silicon, semiconductor hetero-interface, characterization, semiconducting new fabrics, keep an eye on of interface homes and make contact with metallization
Read Online or Download Control of Semiconductor Interfaces. Proceedings of the First International Symposium, on Control of Semiconductor Interfaces, Karuizawa, Japan, 8–12 November, 1993 PDF
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Additional info for Control of Semiconductor Interfaces. Proceedings of the First International Symposium, on Control of Semiconductor Interfaces, Karuizawa, Japan, 8–12 November, 1993
Chabal, and P. Jacob, Surf. Sei. 269/270, 867 (1992).  Ε. Η. Rhoderick and R. Η. Williams, MetalSemiconductor Contacts, 2nd ed. Clarendon Press, Oxford (1988).  S. M. Sze, Physics of Semiconductor Devices, 2nd ed. Wiley (1981).  In type A orientation, the lattices of Al(l 11) and Si(l 11) are aligned identically, while they are rotated 180° around the normal axis for the type Β interfaces. See also Refs. 1 and 5.  S. Ciraci and A. Baratoff, Phys. Rev. Β 43, 7046 (1991).  S. B.
We are gratefiil to Dr. M. Grundner from Wacker Chemitronik in Burghausen for supplying us with the silicon wafers. T. Tung, Phys. Rev. Lett. 52 (1984) 461. R. H. P. M. Klapwijk and T. Hibma, Phys. Rev. Lett. 64 (1990) 1589.  H. D. S. -C. Chiang, Phys. Rev. Lett. 68 (1992) 507.  K. Takayanagi, Y. Tanishiro, M. Takahashi and S. Takahashi, Surf. Sei. 164 (1985) 367.  A. U. Kampen and W. Mönch, Appl. Surf. Sei. 56-58 (1992) 795 and referen ces cited therin. J. Pietsch, U. Köhler and M. Henzler, J.
Submitted to Phys. Rev. Lett. CONTROL OF SEMICONDUCTOR INTERFACES L Ohdomari, Μ. Oshima and A. V. All rights reserved. 45 Heavy-Ion R B S / E R D A Studies on the Growth of Silver on Hydrogen-Terminated S i ( l l l ) Surfaces Masamichi Naitoh, Hajime Morioka, Fumiya Shoji*, Michio Watamori and Kenjiro Oura Department of Electronic Engineering, Faculty of Engineering, Osaka University, Yamadaoka 2-1, Suita, Osaka 565, Japan The growth processes of Ag on Si(lll) surfaces have been in situ studied by heavy-ion Rutherford backscattering spectroscopy (RBS), elastic recoil detection analysis (ERDA), and LEED techniques.