By S. T. Picraux, F. L. Vook (auth.), Dr.-Ing. Ingolf Ruge, Dr.-Ing. Jürgen Graul (eds.)
In fresh years nice growth has been made within the box of ion implantation, quite with appreciate to functions in semiconductors. it might be impos sible to not be aware the becoming curiosity during this box, either via examine teams and people without delay serious about construction of units. in addition, as numerous papers have mentioned, ion implantation and its linked applied sciences promise fascinating advances within the improvement of latest different types of units and supply strength ful new instruments for fabrics investigations. It used to be, for this reason, applicable to rearrange the II. foreign convention on Ion Implantation in Semiconductors in the really little while of 1 12 months because the first convention was once held in 1970 in Thousand Oaks, California. even if ori ginally deliberate on a small scale with a truly constrained variety of contributors, greater than 2 hundred scientists from 15 international locations participated within the convention which used to be held could 24 - 28, 1971 on the Congress middle in Garmisch-Partenkirchen. This quantity includes the papers that have been provided on the convention. as a result of super quantity of analysis awarded, book the following of all of the works in complete aspect was once impossible. Many authors hence graciously agreed to put up abbreviated models in their papers.
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Extra resources for Ion Implantation in Semiconductors: Proceedings of the II. International Conference on Ion Implantation in Semiconductors, Physics and Technology, Fundamental and Applied Aspects May 24–28, 1971, Garmisch-Partenkirchen, Bavaria, Germany
They are stress sensitive: from the stress sensitivity a model (Fig. 2) of the defect configuration has been deduced; it is one where the defect distorts out of its original tetrahedral symmetry to a configuration with C 3v symmetry. D. defects anneal at ~ 250 °c - 300 o C. 1 It appears from these results that the photoconductivity method could be ex- tended to get information on the location of boron in boron implanted silicon and to determine whether part of the non-substitutional boron might occur as Di defects.
Data for 220 keY 4He , 12C , 160, 20Ne , 27AI , 40 Ar, 84Kr , and Xe are plotted in Figs. 1 and 2 as S in dyne/ cm versus vip in If? 220 keY I~A/cm 2 E -¥c :8 , 104 . _- V> V> W '" ~ V> C> ~ til lif 60 keY 20Ne 2 I~Alcm ;0 I~O~I~3-Z-L~~~~~-LLU~IO~I~5~~~~~--L-LL~~,-~~LUULUIO·18 ENERGY INTO ATOMIC PROCESSES (keV/cm 21 4 20 40 84 . Fig. 1. S versus vip for 220keV He, Ne, Ar, Kr, and Xe implants at 1 ~A/cm2. Included are data for 60 keY 20Ne implants at 1 ~A/cm2. t:. 200 keY O. 2. Sversus v~ for 220keV 12 C , 160, 20Ne , and 27AI implants at 1~A/cm2.
X , '. ~ \ \ \ X • • x. 7-2 X X I X , \X .. 1. Plot of boron acceptor density as a function of distance from the surface. 0· 10 11 /cm 2 . -Lm. l for implantation energies of 30, 50, 80, 150, 200 and 300 keV. If a constant dose were used for all the distributions, the lowest energy distribution would have the highest maximum density since it has the lowest straggle. -Lm. 02 of the peak density are actually present in the atom distribution. s D- o: a. 6 -; a. 2. Plot of normalized doping (pip ) against distance.